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Freescale Semiconductor Technical Data
Document Number: MRF6P3300H Rev. 1, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment. * Typical Narrowband Two - Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain -- 20.2 dB Drain Efficiency -- 44.1% IMD -- - 30.8 dBc * Typical Narrowband DVBT OFDM Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM Power Gain -- 20.4 dB Drain Efficiency -- 29% ACPR @ 3.9 MHz Offset -- - 57 dBc @ 20 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Designed for Push - Pull Operation Only * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ
MRF6P3300HR3 MRF6P3300HR5
470 - 860 MHz, 300 W, 32 V LATERAL N - CHANNEL RF POWER MOSFETs
CASE 375G - 04, STYLE 1 NI - 860C3
Value - 0.5, +68 - 0.5, +12 761 4.3 - 65 to +150 150 200
Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 300 W CW Case Temperature 82C, 220 W CW Case Temperature 79C, 100 W CW Case Temperature 81C, 60 W CW Symbol RJC Value (1,2) 0.23 0.24 0.27 0.27 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6P3300HR3 MRF6P3300HR5 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3B (Minimum) C (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IDSS IDSS IGSS
Min -- -- --
Typ -- -- --
Max 10 1 1
Unit Adc Adc Adc
Zero Gate Voltage Drain Leakage Current (4) (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (4) (VDS = 32 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 350 Adc) Gate Quiescent Voltage (VDS = 32 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.4 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.4 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 32 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th) VGS(Q) VDS(on) gfs
1 2 -- --
2.2 2.8 0.22 7.4
3 4 0.3 --
Vdc Vdc Vdc S
Crss
--
1.4
--
pF
Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP, f1 = 857 MHz, f2 = 863 MHz Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Pout @ 1 dB Compression Point, CW (f = 860 MHz) 1. 2. 3. 4. Each side of the device measured separately. Part internally matched both on input and output. Measurement made with device in push - pull configuration. Drains are tied together internally as this is a total device value. Gps D IMD IRL P1dB 19 41 -- -- -- 20.2 44.1 - 30.8 - 24 320 23 -- - 28 -9 -- dB % dBc dB W
MRF6P3300HR3 MRF6P3300HR5 2 RF Device Data Freescale Semiconductor
R1 VBIAS B1 + R3 COAX1 Z4 Z2 RF INPUT Z1 C4 Z3 C5 R2 COAX2 VBIAS + C9 C7 C8 C24 + C19 C20 + C22 C21 B2 Z5 C13 Z11 COAX4 VSUPPLY C6 Z7 DUT C10 C11 C12 Z6 Z8 C1 C2 C3 Z10 Z12 Z14 Z16 C14 RF Z18 OUTPUT C23 + C15 C16 + C18 C17 VSUPPLY
COAX3
Z9
Z13
Z15
Z17
Z1, Z18 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9
0.401 x 0.810 Microstrip 0.563 x 0.810 Microstrip 1.643 x 0.058 Microstrip 0.416 x 0.727 Microstrip 0.191 x 0.507 Microstrip
Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 PCB
1.054 x 0.150 Microstrip 0.225 x 0.507 Microstrip 0.440 x 0.335 Microstrip 0.123 x 0.140 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.5
Figure 1. 820 - 900 MHz Narrowband Test Circuit Schematic
Table 5. 820 - 900 MHz Narrowband Test Circuit Component Designations and Values
Part B1, B2 C1, C9 C2, C7, C17, C21 C3, C8, C16, C20 C4, C5, C13, C14 C6, C12 C10 C11 C15, C19 C18, C22 C23, C24 Coax1, 2, 3, 4 R1, R2 R3 Description Ferrite Beads, Short 1.0 F, 50 V Tantulum Chip Capacitors 0.1 F, 50 V Chip Capacitors 1000 pF 100B Chip Capacitors 100 pF 100B Chip Capacitors 8.2 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitor 1.8 pF 600B Chip Capacitor 47 F, 50 V Electrolytic Capacitors 470 F, 63 V Electrolytic Capacitors 22 pF 600B Chip Capacitors 50 , Semi Rigid Coax, 2.06 Long 10 , 1/8 W Chip Resistors (1206) 1 k, 1/8 W Chip Resistor (1206) Part Number 2743019447 T491C105K050AS CDR33BX104AKWS 100B102JP50X 100B101JP500X 600B8R2BT250XT 600B9R1BT250XT 600B1R8BT250XT MVK50VC47RM8X10TP SME63V471M12X25LL 600B220FT250XT UT - 141A- TP CRCW1206100J CRCW1206102J Kemet Kemet ATC ATC ATC ATC ATC Nippon United Chemi - Con ATC Micro - Coax Dale/Vishay Dale/Vishay Manufacturer Fair- Rite
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 3
C1 C23 VGG R3 C2 C3 R1 B1
C15
C18
VDD C16 C17
COAX1
COAX3
MRF6P9220, Rev. 2
C4 CUT OUT AREA
C14 C12
C5
C6
C10 C11
C13
COAX2
COAX4
R2 VGG C7 C8 B2 C24
C20 VDD
C21
C22 C9 C19
Figure 2. 820 - 900 MHz Narrowband Test Circuit Component Layout
MRF6P3300HR3 MRF6P3300HR5 4 RF Device Data Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
21 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 17.5 17 820 830 840 850 860 870 880 890 f, FREQUENCY (MHz) ACPR VDD = 32 Vdc, Pout = 60 W (Avg.) IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols Gps D, DRAIN EFFICIENCY (%) -5 ACPR (dBc) -10 -15 -20 -25 D, DRAIN EFFICIENCY (%) -5 ACPR (dBc) -10 -15 -20 -25 1200 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) D 31 29 27 25 IRL -45 -50 -55 -60 -65 900
Figure 3. Single - Carrier OFDM Broadband Performance @ 60 Watts Avg.
21 44 D Gps 42 40 38 -45 -47 IRL ACPR -51 -53 900 -49
Gps, POWER GAIN (dB)
VDD = 32 Vdc, Pout = 120 W (Avg.) 20.5 IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier 20 Modulation, 5 Symbols 19.5 19 18.5 18 17.5 17 820 830 840 850 860 870 880 890 f, FREQUENCY (MHz)
Figure 4. Single - Carrier OFDM Broadband Performance @ 120 Watts Avg.
21.5 21 Gps, POWER GAIN (dB) 20.5 20 19.5 19 18.5 18 17.5 5 10 IDQ = 800 mA VDD = 32 Vdc f1 = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 600 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 2400 mA 2000 mA 1600 mA 1200 mA
-10
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing
-20
-30
IDQ = 2400 mA 800 mA
-40 2000 mA
-50 -60 5
1600 mA
10
100 Pout, OUTPUT POWER (WATTS) PEP
600
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 5
TYPICAL NARROWBAND CHARACTERISTICS
-10 IMD, INTERMODULATION DISTORTION (dBc) -20 -30 -40 -50 -60 -70 5 10 100 Pout, OUTPUT POWER (WATTS) PEP 600 3rd Order 5th Order 7th Order VDD = 32 Vdc, IDQ = 1600 mA, f1 = 857 MHz f2 = 863 MHz, Two-Tone Measurements IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 7th Order -55 0.01 0.1 1 10 40 5th Order VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA Two-Tone Measurements, f = 860 MHz 3rd Order
TWO-TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8. Intermodulation Distortion Products versus Tone Spacing @ 860 MHz
64 63 62 Pout, OUTPUT POWER (dBm) 61 60 59 58 57 56 55 54 53 52 32
P6dB = 56.28 dBm (424.54 W) P3dB = 55.87 dBm (386.48 W) P1dB = 55.20 dBm (330.94 W) Actual Ideal
VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 860 MHz 33 34 35 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus Input Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
45 40 35 D 30 25 20 Gps 15 20 30 40 50 60 70 80 90 100 Pout, OUTPUT POWER (WATTS) AVG. -30_C 25_C 85_C ACPR VDD = 32 Vdc, IDQ = 1600 mA, f = 860 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols 25_C
-40 -44 TC = 85_C 25_C -30_C -48 -52 -56 -60 -64 200
Figure 10. Single - Carrier DVBT OFDM ACPR, Power Gain and Drain Efficiency versus Output Power MRF6P3300HR3 MRF6P3300HR5 6 RF Device Data Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
23 -30_C 22 TC = -30_C Gps, POWER GAIN (dB) 21 20 19 18 17 16 5 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 32 Vdc IDQ = 1600 mA f = 860 MHz 25_C 85_C Gps 25_C 85_C 60 Gps, POWER GAIN (dB) 50 40 30 20 10 0 800 D, DRAIN EFFICIENCY (%) 70 21.5 21 20.5 20 19.5 19 18.5 18 17.5 17 16.5 0 VDD = 12 V 50 32 V 16 V 100 20 V 150 200 24 V 250 28 V 300 350 400 IDQ = 1600 mA f = 860 MHz
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
1010 MTTF FACTOR (HOURS x AMPS2)
Figure 12. Power Gain versus Output Power
109
108
107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 7
DIGITAL TEST SIGNALS
100 -20 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 12 PEAK-TO-AVERAGE (dB) 8K Mode DVTB OFDM 64 QAM Data Carrier Modulation 5 Symbols -30 -40 -50 -60 -70 -80 -90 -100 -110 -5 -4 -3 -2 -1 0 1 2 3 4 5 f, FREQUENCY (MHz) 20 kHz BW 20 kHz BW ACPR Measured at 3.9 MHz Offset from Center Frequency 7.61 MHz
Figure 14. Single - Carrier DVTB OFDM
Figure 15. 8K Mode DVBT OFDM Spectrum
100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 ATSC 8VSB 0.001 0.0001 0 1 2 3 4 5 6 7 8
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -4.0 -3.2 -2.4 -1.6 -0.8 0 0.8 1.6 2.4 3.2 4.0 3.25 MHz Offset 3.25 MHz Offset IMRL IMRU Reference Point
PEAK-TO-AVERAGE (dB)
f, FREQUENCY (MHz)
Figure 16. Single - Carrier ATSC 8VSB
Figure 17. ATSC 8VSB Spectrum
MRF6P3300HR3 MRF6P3300HR5 8 RF Device Data Freescale Semiconductor
f = 890 MHz
Zload f = 830 MHz Zo = 10 f = 890 MHz
Zsource
f = 830 MHz
VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP f MHz 830 845 860 875 890 Zsource 4.52 - j6.73 4.22 - j6.38 3.89 - j5.81 3.54 - j5.10 3.39 - j4.32 Zload 4.89 - j1.35 5.06 - j1.01 5.18 - j0.58 5.27 - j0.11 5.36 + j0.43
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
- Z source Z
+ load
Figure 18. 820 - 900 MHz Narrowband Series Equivalent Source and Load Impedance
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 9
R2 VBIAS B1 + R1 C28 C26
Z6 + C3 C5 C7
COAX1
COAX3
Z2 RF INPUT C1
Z4
Z8
Z10
Z12
Z1
C9 Z3 C2 Z5 Z9 Z11
C10 Z13
COAX2 VBIAS + C29 C27
R3 B2 Z7 +
COAX4
C4
C6
C8
Z20 + C18 COAX5 Z14 Z16 Z18 Z22 C20 RF Z26 OUTPUT DUT C11 C12 C13 Z24 C16 C14 + C22 C24 VSUPPLY
COAX7
Z15
Z17
Z19
Z23 C21 COAX6 + C19 C17 C15
Z25
Z21 +
COAX8 VSUPPLY C25
C23
Z1, Z26 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13
0.351 x 0.081 Microstrip 0.139 x 0.214 Microstrip 0.364 x 0.214 Microstrip 1.154 x 0.051 Microstrip 0.086 x 0.100 Microstrip 0.184 x 0.802 Microstrip 0.164 x 0.802 Microstrip
Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 PCB
0.276 x 0.420 Microstrip 0.072 x 0.420 Microstrip 0.072 x 0.031 Microstrip 1.404 x 0.141 Microstrip 0.363 x 0.214 Microstrip 0.139 x 0.214 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.5
Figure 19. 470 - 860 MHz Broadband Test Circuit Schematic MRF6P3300HR3 MRF6P3300HR5 10 RF Device Data Freescale Semiconductor
Table 6. 470 - 860 MHz Broadband Test Circuit Component Designations and Values
Part B1, B2 C1, C2, C20, C21 C3, C4, C14, C15 C5, C6, C16, C17 C7, C8, C18, C19 C9, C13 C10 C11 C12 C22, C23 C24, C25, C26, C27 C28, C29 Coax1, 2, 7, 8 Coax3, 4, 5, 6 R1 R2, R3 Description Ferrite Beads, Short 43 pF 600B Chip Capacitors 100 F, 50 V Electrolytic Capacitors 220 nF, 100 V Chip Capacitors 0.01 F, 100 V Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 15 pF 600B Chip Capacitor 16 pF 600B Chip Capacitor 4.3 pF 600B Chip Capacitor 470 F, 63 V Electrolytic Capacitors 0.1 F, 50 V Chip Capacitors 10 F, 50 V Electrolytic Capacitors 50 , Semi Rigid Coax, 3.00 Long 25 , Semi Rigid Coax, 3.00 Long 1 k, 1/8 W Resistor (1206) 10 , 1/8 W Resistors (1206) Part Number 2743019447 700B430FW500XT 515D107M050BB6A C1812C224K5RAC C1210C103J1RAC 27291SL 600S150FT250XT 600B160FT250XT 600B4R3BT250XT NACZF471M63V CDR33BX104AKWS ECE - V1HA100SP UT - 141C- 50- SP UT - 141C- 25 CRCW1206102J CRCW1206100J ATC Vishay Kemet Kemet Johanson ATC ATC ATC Nippon Kemet Panasonic Micro - Coax Micro - Coax Dale/Vishay Dale/Vishay Manufacturer Fair- Rite
C28 R1 VGG COAX1 R2 B1 C26 COAX3 COAX5 C24 VDD
C22
COAX7
Rev. 3
C3
C14
C1
C5 C7 C10 CUT OUT AREA C9 C11 C12
C16 C18
C20
C13 C19 C17 C21
C2
C8 C6 C4
MRF6P93300
C15
COAX2
R3 VGG
B2 C27
COAX4
COAX6 C25
COAX8 VDD C23
C29
Figure 20. 470 - 860 MHz Broadband Test Circuit Component Layout
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 11
TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 48 44 40 36 IMD 32 28 24 Gps 20 16 400 500 600 700 800 -45 -48 900 VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA Two-Tone Measurements, 6 MHz Tone Spacing -36 -39 -42 D -24 -27 -30 -33
f, FREQUENCY (MHz)
Figure 21. Two - Tone Broadband Performance @ Pout = 270 Watts PEP
MRF6P3300HR3 MRF6P3300HR5 12 RF Device Data Freescale Semiconductor
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
24.5 24 Gps, POWER GAIN (dB) 23.5 23 1600 mA 22.5 22 21.5 21 5 10 1200 mA IDQ = 2400 mA 2000 mA Gps, POWER GAIN (dB) 23.5 IDQ = 2400 mA 23 22.5 22 1600 mA 21.5 21 20.5 800 mA 20 5 10 100 Pout, OUTPUT POWER (WATTS) PEP 1000 1200 mA VDD = 32 Vdc, f1 = 557 MHz, f2 = 563 MHz Two-Tone Measurements, 6 MHz Tone Spacing 2000 mA
800 mA
VDD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 1000
Figure 22. Two - Tone Power Gain versus Output Power @ 473 MHz
21 IDQ = 2400 mA Gps, POWER GAIN (dB) 2000 mA 20 1600 mA 19.5 1200 mA 19 800 mA 18.5 5 10 VDD = 32 Vdc, f1 = 657 MHz, f2 = 663 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 1000 19
Figure 23. Two - Tone Power Gain versus Output Power @ 560 MHz
IDQ = 2400 mA 18.5 2000 mA 18 1600 mA 17.5 1200 mA 17 800 mA 16.5 5 10 VDD = 32 Vdc, f1 = 757 MHz, f2 = 763 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 1000
20.5 Gps, POWER GAIN (dB)
Figure 24. Two - Tone Power Gain versus Output Power @ 660 MHz
20 IDQ = 2400 mA 2000 mA 19 1600 mA 18.5 1200 mA 18 800 mA 17.5 5 10 100
Figure 25. Two - Tone Power Gain versus Output Power @ 760 MHz
19.5 Gps, POWER GAIN (dB)
VDD = 32 Vdc, f1 = 854 MHz, f2 = 860 MHz Two-Tone Measurements, 6 MHz Tone Spacing 1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 26. Two - Tone Power Gain versus Output Power @ 857 MHz
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 13
TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
-25 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 1600 mA -50 -55 10 VDD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 1000 1200 mA 2400 mA 2000 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 800 mA -25 -30 -35 -40 1600 mA -45 -50 -55 10 2000 mA 2400 mA VDD = 32 Vdc, f1 = 557 MHz, f2 = 563 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 1000 IDQ = 800 mA 1200 mA
Figure 27. Third Order Intermodulation Distortion versus Output Power @ 473 MHz
-25 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 2400 mA -50 -55 10 100 Pout, OUTPUT POWER (WATTS) PEP 1000 2000 mA 1600 mA -25 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -30 -35
Figure 28. Third Order Intermodulation Distortion versus Output Power @ 560 MHz
VDD = 32 Vdc, f1 = 657 MHz, f2 = 663 MHz Two-Tone Measurements, 6 MHz Tone Spacing
IDQ = 800 mA
IDQ = 800 mA 1200 mA
1200 mA -40 2400 mA -45 -50 -55 10 2000 mA 1600 mA VDD = 32 Vdc, f1 = 757 MHz, f2 = 763 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 1000
Figure 29. Third Order Intermodulation Distortion versus Output Power @ 660 MHz
-25 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -30 IDQ = 800 mA -35 1200 mA -40 -45 -50 -55 10 2000 mA 1600 mA 2400 mA
Figure 30. Third Order Intermodulation Distortion versus Output Power @ 760 MHz
VDD = 32 Vdc, f1 = 854 MHz, f2 = 860 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 1000
Figure 31. Third Order Intermodulation Distortion versus Output Power @ 857 MHz
MRF6P3300HR3 MRF6P3300HR5 14 RF Device Data Freescale Semiconductor
TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
0 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 3rd Order -30 5th Order -40 -50 -60 0.1 1 10 100 TWO-TONE SPACING (MHz) 7th Order VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA Two-Tone Measurements f1 = 470 MHz, f2 = 470 MHz + Tone Spacing 0 -10 -20 -30 -40 -50 -60 0.01 VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA Two-Tone Measurements, f = 560 MHz
3rd Order 5th Order 7th Order
0.1
1
10
100
TWO-TONE SPACING (MHz)
Figure 32. Intermodulation Distortion Products versus Tone Spacing @ 470 MHz
0 IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 0.01 7th Order 3rd Order 5th Order VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA Two-Tone Measurements, f = 660 MHz IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 -40 -50
Figure 33. Intermodulation Distortion Products versus Tone Spacing @ 560 MHz
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA Two-Tone Measurements, f = 760 MHz
3rd Order
5th Order
7th Order -60 0.01 0.1 1 10 100
0.1
1
10
100
TWO-TONE SPACING (MHz)
TWO-TONE SPACING (MHz)
Figure 34. Intermodulation Distortion Products versus Tone Spacing @ 660 MHz
0 -10 -20 3rd Order -30 5th Order -40 -50 -60 0.1 1 10 7th Order
Figure 35. Intermodulation Distortion Products versus Tone Spacing @ 760 MHz
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA Two-Tone Measurements, 6 MHz Tone Spacing f1 = 860 MHz - Tone Spacing, f2 = 860 MHz
100
TWO-TONE SPACING (MHz)
Figure 36. Intermodulation Distortion Products versus Tone Spacing @ 860 MHz
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 15
TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 30 D 28 26 24 22 20 18 400 VDD = 32 Vdc, Pout = 60 W (Avg.) IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier Modulation, 5 Symbols 500 600 700 ACPR -53 -54 -55 -56 -57 Gps 800 -58 900 -52 ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
f, FREQUENCY (MHz)
Figure 37. Single - Carrier OFDM Broadband Performance @ 60 Watts Avg.
24 f = 560 MHz 23 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 21 20 19 18 3 10 Pout, OUTPUT POWER (WATTS) AVG. 100 200 760 MHz 860 MHz 660 MHz VDD = 32 Vdc, IDQ = 1600 mA 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols 45 40 35 30 25 560 MHz 20 15 10 5 3 10 Pout, OUTPUT POWER (WATTS) AVG. 100 200 VDD = 32 Vdc, IDQ = 1600 mA 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols f = 660 MHz 860 MHz
760 MHz
Figure 38. Single - Carrier DVBT OFDM Power Gain versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -45 VDD = 32 Vdc, IDQ = 1600 mA 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols -50
Figure 39. Single - Carrier DVBT OFDM Drain Efficiency versus Output Power
-55
f = 860 MHz
-60
760 MHz 560 MHz 660 MHz
-65 3 10 Pout, OUTPUT POWER (WATTS) AVG. 100 200
Figure 40. Single - Carrier DVBT OFDM ACPR versus Output Power MRF6P3300HR3 MRF6P3300HR5 16 RF Device Data Freescale Semiconductor
TYPICAL CW BROADBAND CHARACTERISTICS
26 f = 560 MHz D, DRAIN EFFICIENCY (%) 470 MHz 22 660 MHz 20 760 MHz 860 MHz 18 VDD = 32 Vdc, IDQ = 1600 mA 16 5 10 100 Pout, OUTPUT POWER (WATTS) CW 500 70 VDD = 32 Vdc, IDQ = 1600 mA 24 Gps, POWER GAIN (dB) 60 50 40 30 20 10 0 3 10 100 500 Pout, OUTPUT POWER (WATTS) CW f = 660 MHz 760 MHz 560 MHz
470 MHz 860 MHz
Figure 41. CW Power Gain versus Output Power
Figure 42. CW Drain Efficiency versus Output Power
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 17
TYPICAL CW BROADBAND CHARACTERISTICS
57 56.5 56 Pout, OUTPUT POWER (dBm) 55.5 55 54.5 54 53.5 53 52.5 52 51.5 51 28 28.5 29 29.5 30 P1dB = 53.59 dBm (228.67 W)
Ideal
Actual
VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 470 MHz 30.5 31 31.5 32 32.5 33
Pin, INPUT POWER (dBm)
Figure 43. Pulse CW Output Power versus Input Power @ 470 MHz
59 Ideal 58 Pout, OUTPUT POWER (dBm) 57 56 55 54 53 29 30 31 32 P1dB = 54.84 dBm (304.81 W) Actual VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 560 MHz 33 34 35 36 Pout, OUTPUT POWER (dBm) P3dB = 55.49 dBm (353.76 W) 60 59 58 57 56 55 54 53 52 51 30 31 32 33 Actual VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 660 MHz 34 35 36 37 38 P1dB = 54.04 dBm (253.67 W) P3dB = 54.88 dBm (307.45 W) Ideal
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
Figure 44. Pulse CW Output Power versus Input Power @ 560 MHz
60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 31 32 33 34 VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 760 MHz 35 36 37 38 39 P1dB = 54.56 dBm (286.06 W) Actual P3dB = 55.25 dBm (334.73 W) Ideal Pout, OUTPUT POWER (dBm) 60 59 58 57 56 55 54 53 52 32
Figure 45. Pulse CW Output Power versus Input Power @ 660 MHz
P3dB = 55.58 dBm (361.21 W)
Ideal
P1dB = 54.82 dBm (303.25 W) Actual
VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 860 MHz 33 34 35 36 37 38 39 40
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
Figure 46. Pulse CW Output Power versus Input Power @ 760 MHz
Figure 47. Pulse CW Output Power versus Input Power @ 860 MHz
MRF6P3300HR3 MRF6P3300HR5 18 RF Device Data Freescale Semiconductor
TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 37.5 35 32.5 30 27.5 25 22.5 20 17.5 15 400 500 Gps ACPR 600 700 800 VDD = 32 Vdc, Pout = 100 W (Avg.) IDQ = 1700 mA, ATSC 8VSB D -23 -24 -25 -26 -27 -28 -29 -30 -31 -32 -33 900 ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
f, FREQUENCY (MHz)
Figure 48. Single - Carrier ATSC 8VSB Broadband Performance @ 100 Watts Avg.
24 23 22 21 20 19 18 17 3 10 Pout, OUTPUT POWER (WATTS) AVG. 860 MHz VDD = 32 Vdc, IDQ = 1700 mA 100 200 660 MHz 760 MHz D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 470 MHz 40 50 VDD = 32 Vdc, IDQ = 1700 mA ATSC 8VSB
f = 560 MHz
f = 660 MHz 760 MHz 860 MHz 470 MHz 560 MHz
30
20
10
0 3 10 Pout, OUTPUT POWER (WATTS) AVG. 100 200
Figure 49. Single - Carrier ATSC 8VSB Power Gain versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -15 VDD = 32 Vdc, IDQ = 1700 mA ATSC 8VSB -20
Figure 50. Single - Carrier ATSC 8VSB Drain Efficiency versus Output Power
f = 860 MHz 560 MHz
-25
-30 470 MHz 660 MHz 760 MHz 3 10 Pout, OUTPUT POWER (WATTS) AVG. 100 200
-35
-40
Figure 51. Single - Carrier ATSC 8VSB ACPR versus Output Power MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 19
TYPICAL PAL B/G BROADBAND CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 45 40 35 30 25 20 15 400 Gps VDD = 32 Vdc, IDQ = 1500 mA Sync Compression Input = 33%, Output = 27% Peak Sync D 280 275 270 265 260 255 250 245 900
500
600
700
800
f, FREQUENCY (MHz)
Figure 52. Peak Sync, Power Gain and Drain Efficiency versus Frequency
MRF6P3300HR3 MRF6P3300HR5 20 RF Device Data Freescale Semiconductor
PEAK SYNC (W)
Zload
f = 860 MHz
f = 470 MHz Zsource
f = 470 MHz
Zo = 25 Zo = 25 f = 860 MHz
VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP f MHz 470 510 560 610 660 710 760 810 860 Zsource 8.77 - j5.43 8.74 - j4.17 8.86 - j2.87 10.55 - j2.45 12.41 - j3.53 13.11 - j6.04 11.29 - j10.15 6.81 - j10.41 3.73 - j9.66 Zload 6.09 - j4.37 6.39 - j1.65 6.69 - j2.45 7.36 - j1.95 7.73 - j1.75 7.95 - j1.20 8.18 - j1.36 7.81 - j1.60 6.94 - j2.49
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Device Under Test Output Matching Network
Input Matching Network
+
-
- Z source Z
+ load
Figure 53. 470 - 860 MHz Broadband Series Equivalent Source and Load Impedance MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 21
NOTES
MRF6P3300HR3 MRF6P3300HR5 22 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
G L ccc R
M
4
2X
TA
M
B
M
J
1 2
Q bbb
M
TA
M
B
M
(LID) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF
B
5 4X
(FLANGE)
K
4X
3
4
S
(INSULATOR) M
D bbb
M
B TA
M
bbb
TA
M
B
M
B
M
ccc
M
TA
(LID)
M
B
M
N
F
E
H bbb A
(INSULATOR) M
M
C B
M
T
TA A
M
SEATING PLANE
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375G - 04 ISSUE G NI - 860C3
MRF6P3300HR3 MRF6P3300HR5 RF Device Data Freescale Semiconductor 23
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MRF6P3300HR3 MRF6P3300HR5
Rev. 24 1, 5/2006 Document Number: MRF6P3300H
RF Device Data Freescale Semiconductor

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